Description

Key Features & Specifications
  • ESD Protection: 3000V Human Body Model
  • Insertion Loss: 1.0 dB Typ.
  • Port Match: S11 and S22 –15 dB Typ.
  • Power Handling: P–1dB 25 dBm Typ.
  • Distortion: SHI >100 dBm Typ, THI +43 dBm Typ, TOI +43 dBm Typ.
DescriptionThe 1GG5-8205 is a 13.5 GHz GaAs integrated diode limiter that can be used to protect sensitive RF circuits from excess RF power, DC transients, and ESD.The circuit contains Planar–Doped–Barrier (PDB) diodes with integrated matching networks and is fabricated with the MB6A integrated diode process. The barrier height of each diode element and the number of diode elements in each stack are optimized for low distortion when Pin 25 dBm.All HMMC parts are manufactured in Santa Rosa, California using Keysight´,s reliable instrument grade GaAs process.''