Description

Key Features and Functions
  • Precise and fast characterization of new memory, such as spin transfer torque magnetoresistive random access memory (STT-MRAM) from DC to high-speed pulsed IV measurement on silicon wafers
  • Apply accurate and high-speed pulsed voltages (down to 1 ns pulse) to magnetic tunnel junction (MTJ) for STT-MRAM and precisely measure the resistance of MTJ
  • Perform all typical MTJ characterization tests in one solution
  • 10 to 100 times faster cycle test, such as a bit error rate test (BERT)
  • Capture and visualize MTJ switching waveforms clearly during the writing pulse
  • Dedicated solution with Keysight Technologies&rsquo, technical expertise
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